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Power - Max | 143W |
Input Capacitance (Ciss) @ Vds | 3779pF @ 50V |
Gate Charge (Qg) @ Vgs | 49nC @ 4.5V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA |
Current - Continuous Drain (Id) @ 25° C | 50A |
Drain to Source Voltage (Vdss) | 60V |
Rds On (Max) @ Id, Vgs | 6.8 mohm @ 50A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
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