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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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MICRO SEMICONDUCTOR
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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FAIR
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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NXP
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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16 164
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1.97
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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MOTOROLA
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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DC COMPONENTS
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2 858
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2.48
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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FAIRCHILD
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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FAIRCHILD
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2 512
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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MOTOROLA
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49
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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NXP
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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OTHER
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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Fairchild Semiconductor
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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ТАЙВАНЬ(КИТАЙ)
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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КИТАЙ
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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ON SEMI/FAIRCH
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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ONSEMICONDUCTOR
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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ONS-FAIR
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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ONS
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4 160
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7.77
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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HOTTECH
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2 310
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3.17
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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WUXI XUYANG
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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KLS
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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SEMTECH
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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ST MICROELECTRONICS
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4
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1.29
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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1
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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SUNTAN
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2 574
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3.40
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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TRR
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3 800
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1.25
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1N4742A |
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Стабилитрон выводной 1 Вт, 12 V
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UNKNOWN
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208
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5.23
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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11.34
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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10 268
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4.68
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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5 898
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8.42
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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5 600
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1.22
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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370
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1.75
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 600
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1.26
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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2SA1837+2SC4793 |
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Пара PNP+NPN транзисторов 230В, 1А, 70МГц, 20Вт
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TOSHIBA
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1 120
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268.63
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2SA1837+2SC4793 |
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Пара PNP+NPN транзисторов 230В, 1А, 70МГц, 20Вт
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2SC5200-O + 2SA1943-O (ПАРА) ORG |
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TOS
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2SC5200-O + 2SA1943-O (ПАРА) ORG |
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КИТАЙ
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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18
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16.23
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRONICS
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11 791
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21.63
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ON SEMICONDUCTOR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ON SEMICONDUCTOR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRONICS SEMI
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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STMICROELECTRONICS
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ИНДИЯ
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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PILIPINES
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST1
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ST MICROELECTRO
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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STMICROELECTR
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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CHANGJIANG
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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KLS
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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HOTTECH
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839
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10.21
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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CHINA
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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JSCJ
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1 048
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7.83
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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1
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BD139 |
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Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
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ИМОРТ
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