|
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.6A, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 2.6A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 8.2nC @ 10V |
Input Capacitance (Ciss) @ Vds | 140pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
IRFR210 (MOSFET) HEXFET® Power MOSFET
Производитель:
|
|