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Rds On (Max) @ Id, Vgs | 14 Ohm @ 0.1mA, 10V |
FET Feature | Depletion Mode |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | SIPMOS® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 100mA |
Vgs(th) (Max) @ Id | 1V @ 56µA |
Gate Charge (Qg) @ Vgs | 3.5nC @ 5V |
Input Capacitance (Ciss) @ Vds | 76pF @ 25V |
Power - Max | 360mW |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | PG-SOT23-3 |
BSS139 SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Производитель:
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