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Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.8A, 10V |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
Power - Max | 3.1W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
IRF840S (Дискретные сигналы) 500V Single N-channel HexFET Power MOSFET inA D2-Pak Package Также в этом файле: IRF840STRL
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
AP4951GM | ADVANCED POWER ELECT. CORP | |||||||
AP4951GM | ADVANCED POWER ELECT. CORP | 1 344 | ||||||
LM3430SD | NATIONAL SEMICONDUCTOR | |||||||
LM3430SD | 728.00 | |||||||
LM5022MM | NATIONAL SEMICONDUCTOR | |||||||
LM5022MM | 1 | 415.20 | ||||||
LM5022MM | NSC | |||||||
LM5022MM | TEXAS INSTRUMENTS | |||||||
LT1680ISW | LTC | |||||||
LT1680ISW | 2 | 960.00 | ||||||
LT1680ISW | LINEAR TECHNOLOGY | |||||||
LT1680ISW | LINEAR TECHNOLOGY | |||||||
КР1561КТ3 | (CD4066BE) | 3 343 | 12.32 | |||||
КР1561КТ3 | (CD4066BE) | ВИННИЦА | 6 865 | 4.00 |
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