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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Rds On (Max) @ Id, Vgs | 31 mOhm @ 4.6A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 4.6A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) @ Vds | 840pF @ 25V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | SOT-223 |
IRLL3303 (N-канальные транзисторные модули) Hexfet Power Mosfet
Производитель:
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