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Структура транзистора: MOSFET |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | PowerTrench® |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.8A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 8.8A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 24nC @ 5V |
Input Capacitance (Ciss) @ Vds | 1604pF @ 15V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
FDS4435BZ Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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FDS4410 | FAIR |
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FDS4410 | FSC |
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FDS4410 | FAIRCHILD |
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FDS4410 |
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116.00 | ||||
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FDS4410 | FAIRCHILD |
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FDS4410 | Fairchild Semiconductor |
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FDS4410 | FSC1 |
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FDS4410 | A&O |
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FDS4410 | ONS | 150 | 50.38 | |||
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FDS4410 | 4-7 НЕДЕЛЬ | 71 |
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В | MICRO CHIP | 11 | 357.46 | |
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В |
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334.08 | ||
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В | MICRO CHIP | 9 |
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В | Microchip Technology |
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В | 4-7 НЕДЕЛЬ | 449 |
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MCP2551-I/SN |
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MICRO CHIP | 2 372 | 165.31 | ||
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MCP2551-I/SN |
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223.20 | |||
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MCP2551-I/SN |
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Microchip Technology |
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MCP2551-I/SN |
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ТАИЛАНД |
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MCP2551-I/SN |
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MICRO CHIP | 1 |
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MCP2551-I/SN |
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4-7 НЕДЕЛЬ | 268 |
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SN65LVDS1DBVR | TEXAS INSTRUMENTS | 75 | 134.32 | |||||
SN65LVDS1DBVR | TEXAS INSTRUMENTS | 110 |
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SN65LVDS1DBVR | TEXAS | 2 252 | 155.94 | |||||
SN65LVDS1DBVR |
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SN65LVDS1DBVR | 4-7 НЕДЕЛЬ | 433 |
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SN65LVDS1DBVTG4 | TEXAS INSTRUMENTS |
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SN65LVDS1DBVTG4 | TEXAS |
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Корзина
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