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Структура транзистора: MOSFET |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | PowerTrench® |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.8A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 8.8A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 24nC @ 5V |
Input Capacitance (Ciss) @ Vds | 1604pF @ 15V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
FDS4435BZ Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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FDS4410 | FAIR |
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FDS4410 | FSC |
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FDS4410 | FAIRCHILD |
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FDS4410 |
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116.00 | ||||
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FDS4410 | FAIRCHILD |
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FDS4410 | Fairchild Semiconductor |
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FDS4410 | FSC1 |
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FDS4410 | A&O |
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FDS4410 | ONS | 150 | 52.20 | |||
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | INTERNATIONAL RECTIFIER | 40 | 83.16 | |
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W |
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59.68 | ||
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | INTERNATIONAL RECTIFIER |
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | КИТАЙ |
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IRF7416 |
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Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | INFINEON |
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MAX8725ETI | MAXIM |
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MAX8725ETI |
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273.00 | ||||||
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SI4336DY-T1 | SILICONIX |
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SI4336DY-T1 | VISHAY |
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SI4336DY-T1 |
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542.00 | |||||
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SI4336DY-T1 | SILICONIX | 15 |
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SST25VF032B-80-4I-S2AF | MICRO CHIP | 4 | 697.54 | |||||
SST25VF032B-80-4I-S2AF | Microchip Technology |
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SST25VF032B-80-4I-S2AF | SST |
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SST25VF032B-80-4I-S2AF | SILICON STORAGE TECHNOLOGY |
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SST25VF032B-80-4I-S2AF |
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169.48 | ||||||
SST25VF032B-80-4I-S2AF | MICRO CHIP |
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Корзина
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