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Current - Continuous Drain (Id) @ 25° C | 8.3A |
Drain to Source Voltage (Vdss) | 100V |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 8.3A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 4.9V @ 100µA |
Gate Charge (Qg) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1640pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
IRF7853PBF Hexfet Power Mosfet
Производитель:
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