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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 12A, 10V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 12A |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) @ Vgs | 58.3nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2555pF @ 10V |
Power - Max | 2W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOP |
DMN2009LSS (MOSFET) SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Производитель:
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Корзина
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