![]() |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 6.9A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 6.9A |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) @ Vds | 755pF @ 10V |
Power - Max | 2W |
Тип монтажа | Поверхностный |
Корпус (размер) | SOT-23-6 |
Корпус | SOT-26 |
DMN3033LDM (MOSFET) N-CHANNEL ENHANCEMENT MODE MOSFET
Производитель:
|
|
Корзина
|