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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | OptiMOS™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 90A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 90A |
Vgs(th) (Max) @ Id | 2.2V @ 90µA |
Gate Charge (Qg) @ Vgs | 170nC @ 10V |
Input Capacitance (Ciss) @ Vds | 13000pF @ 25V |
Power - Max | 150W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | PG-TO263-3 |
IPB90N06S4L-04 (MOSFET) N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor
Производитель:
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