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FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | OptiMOS™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 90A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 90A |
Vgs(th) (Max) @ Id | 2V @ 253µA |
Gate Charge (Qg) @ Vgs | 160nC @ 10V |
Input Capacitance (Ciss) @ Vds | 11300pF @ 25V |
Power - Max | 137W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | PG-TO252-3 |
IPD90P03P4L-04 (MOSFET) P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor
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