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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | OptiMOS™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 45A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 45A |
Vgs(th) (Max) @ Id | 2.2V @ 35µA |
Gate Charge (Qg) @ Vgs | 64nC @ 10V |
Input Capacitance (Ciss) @ Vds | 4780pF @ 25V |
Power - Max | 71W |
Тип монтажа | Выводной |
Корпус (размер) | TO-262-3 Long Leads, I²Pak, TO-262AA |
Корпус | PG-TO262-3 |
IPI45N06S4L-08 (MOSFET) N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor
Производитель:
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