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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 104A, 10V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 174A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) @ Vds | 3600pF @ 25V |
Power - Max | 200W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
IRF1302S (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
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