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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 85A, 10V |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 142A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 320nC @ 10V |
Input Capacitance (Ciss) @ Vds | 7750pF @ 25V |
Power - Max | 380W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
IRF1607 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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