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FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Rds On (Max) @ Id, Vgs | 46 mOhm @ 4.6A, 10V |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 4.6A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 38nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 3150pF @ 25V |
Power - Max | 1.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-TSSOP (0.173", 4.40mm Width) |
Корпус | 8-TSSOP |
IRF7704 (MOSFET) HEXFET Power MOSFETs Discrete P-Channel
Производитель:
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