![]() |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 480 mOhm @ 4A, 10V |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 6.8A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
Power - Max | 3.8W |
Тип монтажа | Выводной |
Корпус (размер) | TO-262-3 (Straight Leads) |
Корпус | TO-262 |
IRF9520NL (MOSFET) HEXFET Power MOSFETs Discrete P-Channel
Производитель:
|
|
Корзина
|