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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 75A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) @ Vds | 4520pF @ 50V |
Power - Max | 230W |
Тип монтажа | Выводной |
Корпус (размер) | TO-262-3 (Straight Leads) |
Корпус | TO-262 |
IRFSL3306PBF (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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