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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 29A, 7V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 48A |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) @ Vgs | 43nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 2000pF @ 15V |
Power - Max | 69W |
Тип монтажа | Выводной |
Корпус (размер) | TO-262-3 Long Leads, I²Pak, TO-262AA |
Корпус | TO-262-3 |
IRL3202 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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