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FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 8.9 mOhm @ 25A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 58A |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Gate Charge (Qg) @ Vgs | 16nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 1350pF @ 15V |
Power - Max | 55W |
Тип монтажа | Выводной |
Корпус (размер) | TO-251-3 Short Leads, IPak, TO-251AA |
Корпус | I-Pak |
IRLU8729PbF (MOSFET) 30V Single N-Channel HEXFET Power MOSFET
Производитель:
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