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FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 11 Ohm @ 1A, 10V |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 1.5A |
Vgs(th) (Max) @ Id | 4.5V @ 25µA |
Gate Charge (Qg) @ Vgs | 14.5nC @ 10V |
Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
Power - Max | 54W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | TO-263AA |
IXTA1N100 (MOSFET) High Voltage MOSFET
Производитель:
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Корзина
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