FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | TrenchFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 8.1A, 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 65nC @ 8V |
Input Capacitance (Ciss) @ Vds | 2010pF @ 6V |
Power - Max | 4.2W |
Тип монтажа | Поверхностный |
Корпус (размер) | 6-TSOP (0.065", 1.65mm Width) |
Корпус | 6-TSOP |
Si3473CDV (MOSFET) P-Channel 12-V (D-S) MOSFET
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