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FET Feature | Logic Level Gate |
FET Type | 2 N-Channel (Dual) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 7A, 10V |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) @ Vds | 680pF @ 13V |
Power - Max | 1.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
Si4952DY (MOSFET) Dual N-Channel 25-V (D-S) MOSFET
Производитель:
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Корзина
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