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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | TrenchFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 20A, 10V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 34A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 60nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 5000pF @ 10V |
Power - Max | 8.3W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | TO-252, (D-Pak) |
SUD50N02-04P (MOSFET) N-Channel 20-V (D-S) 175C MOSFET
Производитель:
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