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FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | TrenchFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 19.5 mOhm @ 30A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 9.2A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 115nC @ 10V |
Input Capacitance (Ciss) @ Vds | 3500pF @ 25V |
Power - Max | 3.1W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
SUP53P06-20 (MOSFET) P-Channel 60-V (D-S) MOSFET
Производитель:
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Корзина
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