![]() |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 4.8A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 5.36A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 5.8nC @ 10V |
Input Capacitance (Ciss) @ Vds | 459pF @ 40V |
Power - Max | 2.12W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | TO-252-3 |
ZXMN6A08K (MOSFET) 60V DPAK N-channel enhancement mode MOSFET
Производитель:
|
|
Корзина
|