BT138-800
Симистор 12A 800В 35мА
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Версия для печати
| Voltage - Gate Trigger (Vgt) (Max) | 1.5V |
| Current - On State (It (RMS)) (Max) | 12A |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 95A, 105A |
| Current - Gate Trigger (Igt) (Max) | 35mA |
| Voltage - Off State | 800V |
| Current - Hold (Ih) (Max) | 30mA |
| Конфигурация | Single |
| Тип монтажа | Выводной |
| Triac Type | Standard |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Корпус | TO-220AB |
| Корпус (размер) | TO-220-3 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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BT138 (Симистор (TRIAC)) Triacs Sensitive Gate Также в этом файле: BT138-800E
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 57 136 | 1.88 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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MCC |
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1N4007 |
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DIC |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 249 615 | 1.47 | ||
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1N4007 |
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DIOTEC | 115 188 | 3.04 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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JGD |
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MING SHUN |
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MS |
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QUAN-HONG |
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XR |
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1N4007 |
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GALAXY |
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COMPACT TECHNOLOGY |
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DC COMPONENTS |
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FAIRCHILD | 288 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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Fairchild Semiconductor |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 246 181 | 1.43 | ||
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DIODES INC. |
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MIG |
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MICRO COMMERCIAL COMPONENTS |
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MOTOROLA |
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YJ ELE-NIC CORP |
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RECTIFIER |
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EXTRA COM-NTS |
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GALAXY ELECTRICAL |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 4.54 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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149 216 |
1.72 >100 шт. 0.86 |
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ONS-FAIR |
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ONS |
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ELZET |
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GALAXY ME |
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LGE | 23 277 | 1.03 | ||
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HOTTECH | 213 120 | 2.07 | ||
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KLS | 4 720 | 4.13 | ||
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YS |
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YANGJIE | 8 800 | 1 620.49 | ||
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YANGJIE (YJ) |
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MC |
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FAIRCHILD |
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WUXI XUYANG |
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KUU |
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CHINA | 14 485 | 1.09 | ||
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SUNRISETRON |
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UNKNOWN |
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BILIN |
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KEHE |
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1 |
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BL |
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SUNTAN | 75 574 | 1.99 | ||
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TWGMC | 54 678 |
1.50 >500 шт. 0.50 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 123 | 2.17 | ||
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ASEMI | 10 228 | 1.18 | ||
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1N5407 |
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Диод 3А, 800В | MICRO SEMICONDUCTOR |
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1N5407 |
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Диод 3А, 800В | FAIR |
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1N5407 |
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Диод 3А, 800В | GENERAL SEMI INSTRUMENTS |
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1N5407 |
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Диод 3А, 800В | GENERAL SEMICONDUCTOR |
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1N5407 |
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Диод 3А, 800В | MOTOROLA |
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1N5407 |
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Диод 3А, 800В | ON SEMICONDUCTOR |
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1N5407 |
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Диод 3А, 800В | TAIWAN SEMICONDUCTOR |
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1N5407 |
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Диод 3А, 800В | DC COMPONENTS | 6 075 | 6.47 | |
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1N5407 |
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Диод 3А, 800В | SMK |
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1N5407 |
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Диод 3А, 800В | FAIRCHILD |
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1N5407 |
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Диод 3А, 800В | FAIRCHILD |
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1N5407 |
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Диод 3А, 800В | GENERAL SEMI INSTRUMENTS |
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1N5407 |
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Диод 3А, 800В | GENERAL SEMICONDUCTOR |
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1N5407 |
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Диод 3А, 800В | MOTOROLA |
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1N5407 |
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Диод 3А, 800В | ON SEMICONDUCTOR |
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1N5407 |
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Диод 3А, 800В | TAIWAN SEMICONDUCTOR MANF. |
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1N5407 |
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Диод 3А, 800В | Fairchild Semiconductor |
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1N5407 |
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Диод 3А, 800В | ТАЙВАНЬ(КИТАЙ) |
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1N5407 |
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Диод 3А, 800В | 1 | 9.25 | ||
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1N5407 |
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Диод 3А, 800В | КИТАЙ |
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1N5407 |
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Диод 3А, 800В | DIOTEC | 2 668 | 5.06 | |
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1N5407 |
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Диод 3А, 800В | TSC |
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BT151-800R |
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BT151-800R |
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BT151-800R |
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BT151-800R |
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