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Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 135 mOhm @ 1.7A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.4A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) @ Vds | 210pF @ 25V |
Power - Max | 1.25W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Корпус | Micro8™ |
IRF7503 (MOSFET) HEXFET Power MOSFETs Dual N-Channel
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1206-2.2КF | FAITHFUL LINK |
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ADM2483BRW |
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Интерфейс RS-485 Slew-Rate Limited Isolated трансивер | ANALOG DEVICES |
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ADM2483BRW |
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Интерфейс RS-485 Slew-Rate Limited Isolated трансивер |
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636.00 | ||
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ADM2483BRW |
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Интерфейс RS-485 Slew-Rate Limited Isolated трансивер | ANALOG DEVICES |
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ADM2483BRW |
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Интерфейс RS-485 Slew-Rate Limited Isolated трансивер | FULIHAO TECH |
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ADM2483BRW |
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Интерфейс RS-485 Slew-Rate Limited Isolated трансивер | 4-7 НЕДЕЛЬ | 792 |
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BYG20J |
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Диод импульсный 600В, 1.5А, 0.075мкс | VISHAY |
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BYG20J |
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Диод импульсный 600В, 1.5А, 0.075мкс |
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13.20 | ||
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IPW60R045CP | INFINEON |
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IPW60R045CP | 1 536 | 1.79 | |||||
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IPW60R045CP | Infineon Technologies |
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LL42 (0.2A 30V) |
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Корзина
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