Current - Continuous Drain (Id) @ 25° C | 195A |
Drain to Source Voltage (Vdss) | 60V |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 170A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 300nC @ 10V |
Input Capacitance (Ciss) @ Vds | 8970pF @ 50V |
Power - Max | 375W |
Тип монтажа | Выводной |
Корпус (размер) | TO-262-3 (Straight Leads) |
Корпус | TO-262 |
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