![]() |
|
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 10A, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 17A |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
Power - Max | 3W |
Тип монтажа | Выводной |
Корпус (размер) | TO-251-3 Long Leads, IPak, TO-251AB |
Корпус | I-Pak |
IRFU15N20D (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
|
|
Корзина
|