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Gate Charge (Qg) @ Vgs | 12nC @ 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 2.7A, 2A |
Drain to Source Voltage (Vdss) | 30V |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 1.7A, 10V |
FET Feature | Logic Level Gate |
FET Type | N and P-Channel |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) @ Vds | 210pF @ 25V |
Power - Max | 1.25W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Корпус | Micro8™ |
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