Gate Charge (Qg) @ Vgs | 39nC @ 5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 4.7A |
Drain to Source Voltage (Vdss) | 20V |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 4.7A, 4.5V |
FET Feature | Logic Level Gate |
FET Type | 2 P-Channel (Dual) |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) @ Vds | 1700pF @ 15V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-TSSOP (0.173", 4.40mm Width) |
Корпус | 8-TSSOP |
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