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Gate Charge (Qg) @ Vgs | 2nC @ 4.5V |
Vgs(th) (Max) @ Id | 2.4V @ 10µA |
Current - Continuous Drain (Id) @ 25° C | 2.3A |
Drain to Source Voltage (Vdss) | 30V |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 2.3A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) @ Vds | 160pF @ 25V |
Power - Max | 1.25W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | Micro3™/SOT-23 |
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