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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 200mA, 5V |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25° C | 200mA |
Vgs(th) (Max) @ Id | 1.5V @ 1mA |
Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
Power - Max | 225mW |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | SOT-23-3 |
Product Change Notification | Possible Adhesion Issue 11/July/2008 Wire Change for SOT23 Pkg 26/May |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
BAS21HT1G | ONS | |||||||
BAS21HT1G | ON SEMICONDUCTOR | |||||||
BAS21HT1G | ON SEMICONDUCTOR | 17 284 | ||||||
BAS21HT1G | ||||||||
BAS21HT1G | LRC | |||||||
BSH201 | P-channel enhancement mode mos transistor | NXP | ||||||
BSH201 | P-channel enhancement mode mos transistor | PHILIPS | ||||||
BSH201 | P-channel enhancement mode mos transistor | 18.00 | ||||||
BSH201 | P-channel enhancement mode mos transistor | NXP | ||||||
BSH201 | P-channel enhancement mode mos transistor | PHILIPS | 40 | |||||
DB-9F CONNFLY | ||||||||
DB-9F CONNFLY | ||||||||
SN74LVC125ADR | TEXAS INSTRUMENTS | 4 | 27.48 | |||||
SN74LVC125ADR | TEXAS INSTRUMENTS | 64 | ||||||
SN74LVC125ADR | ||||||||
SN74LVC125ADR | TEXAS |
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