| Current - Continuous Drain (Id) @ 25° C | 5A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 3.2A, 4.5V |
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Серия | PowerTrench® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 20nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 825pF @ 10V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
Версия для печати
