Drain to Source Voltage (Vdss) | 100V |
Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 73A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | OptiMOS™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Current - Continuous Drain (Id) @ 25° C | 80A |
Vgs(th) (Max) @ Id | 3.5V @ 75µA |
Gate Charge (Qg) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) @ Vds | 3980pF @ 50V |
Power - Max | 125W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | PG-TO263-2 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
ESR10EZPJ331 | ROHM | |||||||
ESR10EZPJ331 | ROHM | |||||||
ESR10EZPJ331 | Rohm Semiconductor | |||||||
L6392D | ST MICROELECTRONICS | |||||||
L6392D | STMicroelectronics | |||||||
L6392D | ||||||||
L6392D | ||||||||
MCR18EZHJ221 | ROHM | |||||||
MCR18EZHJ221 | ROHM | |||||||
MCR18EZHJ221 | Rohm Semiconductor | |||||||
SK810L-TP | Micro Commercial Co | |||||||
SK810L-TP | ||||||||
STD60NF06T4 | ST MICROELECTRONICS | |||||||
STD60NF06T4 | ST MICROELECTRONICS SEMI | |||||||
STD60NF06T4 | STMicroelectronics | |||||||
STD60NF06T4 | ||||||||
STD60NF06T4 | ||||||||
STD60NF06T4 | JSMICRO | 962 | 46.20 |
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