Si7617DN
|
Версия для печати
| Gate Charge (Qg) @ Vgs | 59nC @ 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 12.3 mOhm @ 13.9A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 15V |
| Power - Max | 52W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® 1212-8 |
| Корпус | PowerPAK® 1212-8 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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| BLM18PG221SN1D | MUR | 77 784 |
1.16 >100 шт. 0.58 |
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| BLM18PG221SN1D | Murata Electronics North America |
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| BLM18PG221SN1D | MURATA | 11 428 |
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| BLM18PG221SN1D | MURATA* |
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| NTR4003NT1G | ONS | 11 773 | 9.73 | |||||
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| SN74LVC1G97DCKR | TEXAS INSTRUMENTS |
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