Si7617DN

Версия для печати

Технические характеристики Si7617DN

Gate Charge (Qg) @ Vgs	59nC @ 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Current - Continuous Drain (Id) @ 25° C	35A
Drain to Source Voltage (Vdss)	30V
Rds On (Max) @ Id, Vgs	12.3 mOhm @ 13.9A, 10V
FET Feature	Standard
FET Type	MOSFET P-Channel, Metal Oxide
Серия	TrenchFET®
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) @ Vds	1800pF @ 15V
Power - Max	52W
Тип монтажа	Поверхностный
Корпус (размер)	PowerPAK® 1212-8
Корпус	PowerPAK® 1212-8

* Представленная техническая информация носит справочный характер и не предназначена для использования в конструкторской документации.

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