| Rds On (Max) @ Id, Vgs | 185 mOhm @ 2.4A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.7A |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) @ Vgs | 14.3nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 492pF @ 25V |
| Power - Max | 1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
| Product Change Notification | Specification Change MSL Updated 2/April/2007 |
Версия для печати
