Структура транзистора: MOSFET |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | PowerTrench® |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.8A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 8.8A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 24nC @ 5V |
Input Capacitance (Ciss) @ Vds | 1604pF @ 15V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
FDS4435BZ Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
FDS4410 | FAIR | |||||||
FDS4410 | FSC | |||||||
FDS4410 | FAIRCHILD | |||||||
FDS4410 | 116.00 | |||||||
FDS4410 | FAIRCHILD | |||||||
FDS4410 | Fairchild Semiconductor | |||||||
FDS4410 | FSC1 | |||||||
FDS4410 | A&O | |||||||
FDS4410 | ONS | |||||||
IRF7416 | Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | INTERNATIONAL RECTIFIER | 40 | 112.20 | ||||
IRF7416 | Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | 59.68 | ||||||
IRF7416 | Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | INTERNATIONAL RECTIFIER | ||||||
IRF7416 | Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | КИТАЙ | ||||||
IRF7416 | Транзистор полевой SMD P-MOS 30V, 10A, 2.5W | INFINEON | ||||||
MAX8725ETI | MAXIM | |||||||
MAX8725ETI | 273.00 | |||||||
SI4336DY-T1 | SILICONIX | |||||||
SI4336DY-T1 | VISHAY | |||||||
SI4336DY-T1 | 542.00 | |||||||
SI4336DY-T1 | SILICONIX | 15 | ||||||
SST25VF032B-80-4I-S2AF | MICRO CHIP | |||||||
SST25VF032B-80-4I-S2AF | Microchip Technology | |||||||
SST25VF032B-80-4I-S2AF | SST | |||||||
SST25VF032B-80-4I-S2AF | SILICON STORAGE TECHNOLOGY | |||||||
SST25VF032B-80-4I-S2AF | 169.48 | |||||||
SST25VF032B-80-4I-S2AF | MICRO CHIP |
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