| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 6V |
| Power - Max | 500mW |
| Frequency - Transition | 100MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Корпус | TO-92-3 |
| Product Change Notification | Fe Wire Change 12/Oct/2007 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2SA1145 |
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Транзистор PNP 150V, 50mA, 0.8W, 200MHz
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TOSHIBA
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2SA1145 |
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Транзистор PNP 150V, 50mA, 0.8W, 200MHz
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28.56
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2SA1145 |
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Транзистор PNP 150V, 50mA, 0.8W, 200MHz
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TOS
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P
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SK
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P
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SANKEN
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P
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244.00
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P
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КИТАЙ
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P
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ISCSEMI
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2SC2229 |
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Биполярный транзистор Si-N, 200V, 0,05A, 0,8W, 120MHz
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TOSHIBA
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2SC2229 |
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Биполярный транзистор Si-N, 200V, 0,05A, 0,8W, 120MHz
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TOS
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2SC2229 |
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Биполярный транзистор Si-N, 200V, 0,05A, 0,8W, 120MHz
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17.40
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2SC2229 |
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Биполярный транзистор Si-N, 200V, 0,05A, 0,8W, 120MHz
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ТАЙВАНЬ (КИТАЙ)
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2SC2229 |
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Биполярный транзистор Si-N, 200V, 0,05A, 0,8W, 120MHz
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ТАЙВАНЬ(КИТАЙ)
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2SC2229 |
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Биполярный транзистор Si-N, 200V, 0,05A, 0,8W, 120MHz
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КИТАЙ
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560)
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SANKEN
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560)
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SK
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560)
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248.40
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560)
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КИТАЙ
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560)
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ISCSEMI
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KNP100JR-73-0R33 |
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Yageo
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5 105
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3.83
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KNP100JR-73-0R33 |
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Версия для печати
