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Корпус | NS-B1 |
Корпус (размер) | NS-B1 |
Тип монтажа | Выводной |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Current - Collector (Ic) (Max) | 500mA |
Transistor Type | NPN |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
2SD1450 (Универсальные биполярные транзисторы) Silicon NPN epitaxial planer type For low-frequency amplification
Производитель:
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