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Current - Continuous Drain (Id) @ 25° C | 2.4A |
Drain to Source Voltage (Vdss) | 20V |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.6A, 4.5V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 210pF @ 15V |
Power - Max | 1.7W |
Тип монтажа | Поверхностный |
Корпус (размер) | Micro6™(TSOP-6) |
Корпус | Micro6™(TSOP-6) |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
CRCW0805120RFKEA | VISHAY |
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CRCW0805120RFKEA | VISHAY |
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CRCW0805120RFKEA | Vishay/Dale |
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CRCW0805120RFKEA |
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FT2232D-T/R | FTDI |
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FT2232D-T/R |
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MAX491ECSD | MAXIM |
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MAX491ECSD |
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MAX491ECSD | MAX |
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MAX491ECSD | MAXIM |
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TPS54060DGQ |
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Стаб напр. ШИМ (Vin=3,5.60V, Vout=0.8.58V, Io=500mA, F=0.1///2.5MHz, t=-40.+150C) | TEXAS INSTRUMENTS |
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TPS54060DGQ |
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Стаб напр. ШИМ (Vin=3,5.60V, Vout=0.8.58V, Io=500mA, F=0.1///2.5MHz, t=-40.+150C) |
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TPS54060DGQ |
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Стаб напр. ШИМ (Vin=3,5.60V, Vout=0.8.58V, Io=500mA, F=0.1///2.5MHz, t=-40.+150C) | TEXAS |
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TPS7333QD | TEXAS INSTRUMENTS |
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TPS7333QD | 1 260 | 228.80 | |||||
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TPS7333QD | СЕВЕРНАЯ КОРЕЯ |
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TPS7333QD | КОРЕЯ, НАРОДНО- |
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TPS7333QD | КОРЕЯ РЕСПУБЛИК |
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TPS7333QD | TEXAS |
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TPS7333QD | TEXAS INSTRUMEN |
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Корзина
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