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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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KLS7-TS3608-5.0-180-T |
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KLS
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KLS7-TS3608-5.0-180-T |
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ONS
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTOR
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160
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTO
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ONSEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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12 736
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2.89
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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12
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2.88
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONS
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2 320
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7.87
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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7.20
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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1 003
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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GALAXY
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTO
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONSEMICONDUCTOR
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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0.00
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SDR0604-2R2ML |
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Индуктивность 2, 2 мкГн SMD
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BOURNS
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160
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49.80
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SDR0604-2R2ML |
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Индуктивность 2, 2 мкГн SMD
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96.00
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SDR0604-2R2ML |
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Индуктивность 2, 2 мкГн SMD
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ВОURNS
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216
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38.38
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К1274СП29П |
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К1274СП29П |
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ТРАНЗИСТОР
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К1274СП29П |
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МИНСК
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4 219
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32.00
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К1274СП29П |
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ИНТЕГРАЛ
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26
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35.70
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К1274СП29П |
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