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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | TrenchMOS™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 75mA, 2.5V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 300mA |
Vgs(th) (Max) @ Id | 1.3V @ 1mA |
Gate Charge (Qg) @ Vgs | 1nC @ 8V |
Input Capacitance (Ciss) @ Vds | 40pF @ 10V |
Power - Max | 700mW |
Тип монтажа | Поверхностный |
Корпус (размер) | SC-70, SOT-323 |
Корпус | SC-70 |
BSH121 (MOSFET) N-channel enhancement mode field-effect transistor
Производитель:
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Корзина
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