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Current - Continuous Drain (Id) @ 25° C | 375mA |
Drain to Source Voltage (Vdss) | 250V |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 300mA, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Input Capacitance (Ciss) @ Vds | 120pF @ 25V |
Power - Max | 1.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | SOT-223 |
BSP126 (MOSFET) N-channel enhancement mode vertical D-MOS transistor
Производитель:
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