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Корпус | 8-SO |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Тип монтажа | Поверхностный |
Power - Max | 2.5W |
Input Capacitance (Ciss) @ Vds | 1280pF @ 25V |
Gate Charge (Qg) @ Vgs | 49nC @ 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 2.2A |
Drain to Source Voltage (Vdss) | 150V |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.3A, 10V |
FET Feature | Standard |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
IRF6216 (Дискретные сигналы) 150V Single P-channel HexFET Power MOSFET inA SO-8 Package
Производитель:
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