| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 27A, 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 27A |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Gate Charge (Qg) @ Vgs | 42nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 4130pF @ 10V |
| Power - Max | 2.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | DirectFET™ Isometric MX |
| Корпус | DIRECTFET™ MX |
| Other Related Documents | DirectFET MOSFET 4Ps Checklist |
Версия для печати
