IRFL110TRPBF
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Версия для печати
| Current - Continuous Drain (Id) @ 25° C | 1.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 900mA, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 8.3nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 180pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BAS16XV2T1G | ON SEMICONDUCTOR | 280 | 16.62 | |||||
| BAS16XV2T1G | ON SEMICONDUCTOR | 540 |
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| BAS16XV2T1G | ONS |
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| BAS16XV2T1G | ONSEMICONDUCTOR |
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| BAS16XV2T1G |
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| BAS21HT1G | ONS |
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| BAS21HT1G | ON SEMICONDUCTOR |
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| BAS21HT1G | ON SEMICONDUCTOR | 17 284 |
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| BAS21HT1G |
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| BAS21HT1G | LRC |
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| BAS21HT1G | FUXIN | 22 084 | 1.25 | |||||
| PBD-32 | 113 | 82.72 | ||||||
| PBD-32 | NXU |
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| PBD-32 | KLS | 1 752 | 32.47 | |||||
| PBD-32 | BM |
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| PLLD1.27-10A | KLS |
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| PLLD1.27-10A |
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T491X107K025AT |
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Kemet | 264 | 127.92 | |||
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T491X107K025AT |
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T491X107K025AT |
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KEM |
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T491X107K025AT |
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KEMET |
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T491X107K025AT |
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KEMET/YAGEO |
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