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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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0805-390 1% |
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ЧИП — резистор
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1.08
>500 шт. 0.36
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2SK2611 |
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Транзистор полевой N-MOS 900В, 9A, 150Вт
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TOSHIBA
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2SK2611 |
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Транзистор полевой N-MOS 900В, 9A, 150Вт
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TOS
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2SK2611 |
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Транзистор полевой N-MOS 900В, 9A, 150Вт
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2
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689.92
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2SK2611 |
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Транзистор полевой N-MOS 900В, 9A, 150Вт
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КИТАЙ
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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1 104
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2.45
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ON SEMICONDUCTOR
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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GALAXY
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5 447
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3.17
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ONS
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP
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3 888
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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Diodes Inc
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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КИТАЙ
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DI
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DC COMPONENTS
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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INFINEON
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DIODES
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DIOTEC
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24 220
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2.94
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ONSEMICONDUCTOR
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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GALAXY ME
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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INFINEON
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102
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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LRC
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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HOTTECH
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27 904
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1.38
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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PANJIT
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SEMTECH
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76
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3.28
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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WUXI XUYANG
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52
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2.88
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SEMICRON
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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KOME
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP/NEXPERIA
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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YANGJIE (YJ)
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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JSCJ
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10
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1.85
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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YJ
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102 859
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1.97
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BAV99,215 |
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NXP Semiconductors
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BAV99,215 |
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NXP
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BAV99,215 |
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NEX
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BAV99,215 |
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NXP
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BAV99,215 |
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NEXPERIA
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BAV99,215 |
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9
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BAV99,215 |
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NEX-NXP
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2
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11.81
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BAV99,215 |
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NXP/NEXPERIA
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BAV99,215 |
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NEXPERIA
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LP2980IM5-5.0 |
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ИМС
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NATIONAL SEMICONDUCTOR
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LP2980IM5-5.0 |
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ИМС
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NSC
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LP2980IM5-5.0 |
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ИМС
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38.00
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LP2980IM5-5.0 |
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ИМС
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NATIONAL SEMICONDUCTOR
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72
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LP2980IM5-5.0 |
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ИМС
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ВЕЛИКОБРИТАНИЯ
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LP2980IM5-5.0 |
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ИМС
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TEXAS INSTRUMENTS
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170
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LP2980IM5-5.0 |
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ИМС
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TEXAS INSTRUMENTS
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