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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10K |
Resistor - Emitter Base (R2) (Ohms) | 10K |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Power - Max | 250mW |
Тип монтажа | Поверхностный |
Корпус (размер) | 6-TSSOP, SC-88, SOT-363 |
Корпус | SOT-363 |
Product Change Notification | Wire Change 08/Jun/2009 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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CC0805KKX5R8BB475 | ТАЙВАНЬ(КИТАЙ) |
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CC0805KKX5R8BB475 | YAGEO | 296 | 1.24 | |||||
CC0805KKX5R8BB475 |
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CRCW2010330RJNEF | VISHAY |
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CRCW2010330RJNEF | Vishay/Dale |
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CRCW2010330RJNEF |
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CRCW2010330RJNEF | VIS |
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LQH32CN100K23L |
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Индуктивность ЧИП 10 мкГн, 10%, 300мА (1210) | MURATA |
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LQH32CN100K23L |
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Индуктивность ЧИП 10 мкГн, 10%, 300мА (1210) | CHINA |
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LQH32CN100K23L |
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Индуктивность ЧИП 10 мкГн, 10%, 300мА (1210) |
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25.88 | ||||
LQH32CN100K23L |
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Индуктивность ЧИП 10 мкГн, 10%, 300мА (1210) | MUR | 28 010 | 6.74 | |||
LQH32CN100K23L |
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Индуктивность ЧИП 10 мкГн, 10%, 300мА (1210) | Murata Electronics North America |
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NCP1406SNT1G | ONS |
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NCP1406SNT1G | ON SEMICONDUCTOR |
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NCP1406SNT1G | ON SEMICONDUCTOR |
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NCP1406SNT1G |
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49.96 | ||||||
NCP1406SNT1G | ONSEMICONDUCTOR |
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RC0603JR-07200KL | YAGEO | 442 841 |
0.60 >1000 шт. 0.12 |
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RC0603JR-07200KL | YAGEO | 9 677 |
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RC0603JR-07200KL |
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Корзина
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